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SUD50P06-15L-E3 Tech Specifications
Vishay SUD50P06-15L-E3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 16 Weeks, 4 Days | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Drain Current-Max (ID) | 50 A | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Gross weight | 500.00 | |
| Transport packaging size/quantity | 61.5*42*44/5 | |
| Working load | 60 g -150 g | |
| Working temperature | -20°C - 65°C | |
| Diagonal | 15 inches | |
| Life span | 1 million touches | |
| Transmittance coefficient (transparency) | >75% | |
| Surface hardness | >3H | |
| Series | R-GAGE® K50R | |
| Packaging | Box | |
| Operating Temperature | -40°C ~ 60°C | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Resistance | X:360Ω-880 Ω Y:200 Ω-500 Ω | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Output Type | NPN, PNP | |
| Working voltage | 10 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Response time | <10 milliseconds | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | TO-252 | |
| Sensor Type | Radar Sensor | |
| Linearity | <1.5% | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 136 W | |
| Saturation Current | 1 | |
| Height | 247 mm | |
| Width | 322 mm |
SUD50P06-15L-E3 Documents
Download datasheets and manufacturer documentation for SUD50P06-15L-E3
- Datasheets16d7ae97903b02eb708dc5713062740a.pdf
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