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SI7129DN-T1-GE3 Tech Specifications

Vishay  SI7129DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Drain Current-Max (ID) 35 A
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code S-XDSO-C5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain-source On Resistance-Max 0.0114 Ω
Pulsed Drain Current-Max (IDM) 60 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 31.25 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 52.1 W
Saturation Current 1
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SI7129DN-T1-GE3 Documents

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