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SIZ980BDT-T1-GE3 Tech Specifications

Vishay  SIZ980BDT-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Type of transistor N-MOSFET x2 + Schottky
Polarisation unipolar
Drain-source voltage 30V
Drain current 54.8/197A
Pulsed drain current 90...130A
Mounting SMD
Kind of package1 tape
Kind of package reel
Kind of channel enhanced
Gross weight 0.1g
Certificates RoHS compliant
Power dissipation 20/66W
Gate charge 18/79nC
On-state resistance 7.12/1.72mΩ
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