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SIS932EDN-T1-GE3

Vishay  SIS932EDN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 30V
Drain current 6A
Pulsed drain current 40A
Case PowerPAK® 1212-8
Gate-source voltage ±12V
Mounting SMD
Kind of package1 tape
Kind of package reel
Kind of channel enhanced
Gross weight 1g
Certificates RoHS compliant
Power dissipation 14.8W
Gate charge 14nC
On-state resistance 26mΩ
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