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SI7913DN-T1-GE3 Tech Specifications

Vishay  SI7913DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -20V
Drain current -7.4A
Pulsed drain current -20A
Case PowerPAK® 1212-8
Gate-source voltage ±8V
Mounting SMD
Kind of package1 tape
Kind of package reel
Kind of channel enhanced
Gross weight 0.1g
Certificates RoHS compliant
Power dissipation 2.8W
Gate charge 24nC
On-state resistance 66mΩ
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