TT Electronics / Semelab BYV32-100M RF Diodes
BYV32-100M
2577-353-BYV32-100M
Rectifier Diode Switching 100V 20A 35ns 3-Pin(3 Tab) TO-257AB
Min. : 1
Mult. : 1
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BYV32-100M
TT Electronics BYV32-100M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| ECCN (US) | EAR99 | |
| HTS | 8541.10.00.80 | |
| Maximum DC Reverse Voltage (V) | 100 | |
| Peak Reverse Repetitive Voltage (V) | 100 | |
| Maximum Continuous Forward Current (A) | 20 | |
| Peak Non-Repetitive Surge Current (A) | 80 | |
| Peak Forward Voltage (V) | 1.5 | |
| Peak Reverse Current (uA) | 30 | |
| Peak Reverse Recovery Time (ns) | 35 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 200 | |
| Supplier Package | TO-257AB | |
| Military | No | |
| Mounting | Through Hole | |
| Package Height | 10.92(Max) | |
| Package Length | 10.92(Max) | |
| Package Width | 5.33(Max) | |
| PCB changed | 3 | |
| Tab | Tab | |
| Part Status | Obsolete | |
| Type | Switching Diode | |
| Pin Count | 3 | |
| Configuration | Dual Common Cathode | |
| RoHS Status | RoHS non-compliant |
BYV32-100M
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