TT Electronics Resistors IRF9130 Specialized Transistors
IRF9130
2577-375-IRF9130
RoHS Compliant
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN
In Stock Min. : 1
Mult. : 1
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IRF9130 Tech Specifications
TT Electronics IRF9130 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | TT ELECTRONICS PLC | |
| Package Description | HERMETIC SEALED, METAL, TO-3, 2 PIN | |
| Drain Current-Max (ID) | 11 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | TO-3 | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 81 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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