TT Electronics HCT802 RF MOSFETs Transistors
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HCT802 Tech Specifications
TT Electronics HCT802 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | HCT802 | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | OPTEK TECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-CDSO-N6 | |
| Risk Rank | 5.76 | |
| Drain Current-Max (ID) | 2 A | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-CDSO-N6 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Drain-source On Resistance-Max | 5 Ω | |
| DS Breakdown Voltage-Min | 90 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Feedback Cap-Max (Crss) | 10 pF |
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