Texas Instruments NDB706B Specialized Transistors
NDB706B
2502-375-NDB706B
RoHS Compliant
70A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
In Stock Min. : 1
Mult. : 1
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NDB706B Tech Specifications
Texas Instruments NDB706B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Drain Current-Max (ID) | 70 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Turn-off Time-Max (toff) | 280 ns | |
| Turn-on Time-Max (ton) | 430 ns | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| Pulsed Drain Current-Max (IDM) | 210 A | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 800 pF | |
| Power Dissipation Ambient-Max | 150 W |
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