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MBR3035CT Tech Specifications

Taiwan Semiconductor  MBR3035CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 years ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Manufacturer Lifecycle Status ACTIVE (Last Updated: 2 years ago)
RoHS Compliant
Package Tube
Mfr Taiwan Semiconductor Corporation
Product Status Active
Current - Average Rectified (Io) (per Diode) 30A (DC)
Series -
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 200 µA @ 35 V
Power Dissipation 400 mW
Voltage - Forward (Vf) (Max) @ If 820 mV @ 30 A
Forward Current 30 A
Max Reverse Leakage Current 200 µA
Operating Temperature - Junction -55°C ~ 150°C
Max Surge Current 200 A
Voltage - DC Reverse (Vr) (Max) 35 V
Forward Voltage 700 mV
Reverse Recovery Time 25 ns
Peak Reverse Current 200 µA
Max Repetitive Reverse Voltage (Vrrm) 35 V
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 200 A
Max Junction Temperature (Tj) 150 °C
Width 4.7 mm
Height 8.24 mm
Length 10.5 mm
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