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DBLS157G RD Tech Specifications

Taiwan Semiconductor  DBLS157G RD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount YES
Diode Element Material SILICON
Number of Terminals 4Terminals
ECCN (US) EAR99
HTS 8541.10.00.80
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 1000
Peak Average Forward Current (A) 1.5
Peak RMS Reverse Voltage (V) 700
Peak Non-Repetitive Forward Surge Current (A) 50
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 2
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Automotive No
Standard Package Name DBLS
Supplier Package DBLS
Military No
Mounting Surface Mount
Package Height 2.6(Max)
Package Length 8.51(Max)
Package Width 6.5(Max)
PCB changed 4
Package Description R-PDSO-G4
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Reflow Temperature-Max (s) 30
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number DBLS157GRD
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor Manufacturing Company Limited
Number of Elements 4 Elements
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Forward Voltage-Max (VF) 1.1 V
Risk Rank 5.64
Packaging Tape and Reel
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
HTS Code 8541.10.00.80
Subcategory Bridge Rectifier Diodes
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code R-PDSO-G4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Output Current-Max 1.5 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 1000 V
Non-rep Pk Forward Current-Max 50 A
Breakdown Voltage-Min 1000 V
RoHS Status Yes with exemptions
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DBLS157G RD Documents

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