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BZW04-28R0 Tech Specifications

Taiwan Semiconductor  BZW04-28R0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case DO-41-2
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 2Terminals
Breakdown Voltage / V 31.4 V
Pd - Power Dissipation 1 W
Maximum Operating Temperature + 175 C
Vesd - Voltage ESD Contact -
Unit Weight 0.010582 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 5000
Ipp - Peak Pulse Current 8.8 A
Pppm - Peak Pulse Power Dissipation 400 W
Manufacturer Taiwan Semiconductor
Brand Taiwan Semiconductor
RoHS Details
Package Description O-PALF-W2
Package Style LONG FORM
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number BZW04-28R0
Power Dissipation (Max) 1 W
Package Shape ROUND
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Risk Rank 5.21
Series BZW04
Packaging Cut Tape
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
HTS Code 8541.10.00.50
Subcategory TVS Diodes / ESD Suppression Diodes
Technology AVALANCHE
Terminal Position AXIAL
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Termination Style Axial
JESD-30 Code O-PALF-W2
Working Voltage 28.2 V
Polarity Unidirectional
Configuration SINGLE
Number of Channels 1 ChannelChannel
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Case Connection ISOLATED
Clamping Voltage 45.7 V
Product Type TVS Diodes
Rep Pk Reverse Voltage-Max 28.2 V
JEDEC-95 Code DO-204AL
Non-rep Peak Rev Power Dis-Max 400 W
Breakdown Voltage-Min 31.4 V
Breakdown Voltage-Max 34.7 V
Product Category ESD Suppressors / TVS Diodes
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