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STS2DNF30L Tech Specifications

STMicroelectronics  STS2DNF30L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status NRND (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 4.535924g
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 12 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™
JESD-609 Code e4
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS2D
Pin Count 8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 19 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 121pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Rise Time 20ns
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 18V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.15Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 9A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 6.35mm
Length 50.8mm
Width 6.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STS2DNF30L Documents

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