STMicroelectronics L6389EDTR Gate Drivers 17V Max 2Drivers
L6389EDTR
2381-546-L6389EDTR
8-SOIC (0.154, 3.90mm Width)
RoHS Compliant
Input Type: Inverting,Channel Type: Independent,Gate Type: IGBT, N-Channel, P-Channel MOSFET
In Stock
:
20000 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
L6389EDTR Tech Specifications
STMicroelectronics L6389EDTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Driver Configuration | Half-Bridge | |
| Logic voltage-VIL, VIH | 1.1V 1.8V | |
| Usage Level | Industrial grade | |
| Operating Temperature | -45°C~125°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Voltage - Supply | 17V Max | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | L6389 | |
| Input Type | Inverting | |
| Rise / Fall Time (Typ) | 70ns 40ns | |
| Channel Type | Independent | |
| Number of Drivers | 2Drivers | |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET | |
| Current - Peak Output (Source, Sink) | 400mA 650mA | |
| High Side Voltage - Max (Bootstrap) | 600V | |
| RoHS Status | ROHS3 Compliant |
L6389EDTR Documents
Download datasheets and manufacturer documentation for L6389EDTR
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ