Semicoa Semiconductors JANTX2N6798 Specialized Transistors
JANTX2N6798
3033-375-JANTX2N6798
RoHS Compliant
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
In Stock Min. : 1
Mult. : 1
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JANTX2N6798 Tech Specifications
Semicoa JANTX2N6798 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | SEMICOA CORP | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Drain Current-Max (ID) | 5.5 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Reference Standard | MIL-19500 | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-205AF | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| DS Breakdown Voltage-Min | 200 V | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 25 W |
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