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Samsung Semiconductor M470L6524DU0-CB3 Memory Modules
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M470L6524DU0-CB3 Tech Specifications
Samsung M470L6524DU0-CB3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 200Terminals | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| Module | DRAM Module | |
| Module Density | 512Mbyte | |
| Number of Chip per Module | 8Chip per Modules | |
| Chip Density (bit) | 512M | |
| Data Bus Width (bit) | 64 | |
| Max. Access Time (ns) | 0.7 | |
| Maximum Clock Rate (MHz) | 333 | |
| Chip Configuration | 32Mx16 | |
| Chip Package Type | 66TSOP-II | |
| Minimum Operating Supply Voltage (V) | 2.3 | |
| Typical Operating Supply Voltage (V) | 2.5 | |
| Maximum Operating Supply Voltage (V) | 2.7 | |
| Operating Current (mA) | 1000 | |
| Minimum Operating Temperature (°C) | 0 | |
| Maximum Operating Temperature (°C) | 70 | |
| Supplier Temperature Grade | Commercial | |
| Module Sides | Double | |
| ECC Support | No | |
| Number of Ranks | DualRank | |
| CAS Latency | 2.5 | |
| SPD EEPROM Support | Yes | |
| Mounting | Socket | |
| Package Height | 31.75 | |
| Package Width | 3.8(Max) | |
| Package Length | 67.6 | |
| PCB changed | 200 | |
| Supplier Package | USODIMM | |
| Lead Shape | No Lead | |
| Package Description | DIMM, DIMM200,24 | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Moisture Sensitivity Levels | 3 | |
| Number of Words Code | 64000000Words Codes | |
| Package Body Material | UNSPECIFIED | |
| Package Equivalence Code | DIMM200,24 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 0.7 ns | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | M470L6524DU0-CB3 | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| Number of Words | 67108864 wordsWord | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Samsung Semiconductor | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Risk Rank | 5.84 | |
| Part Package Code | MODULE | |
| Part Status | Obsolete | |
| ECCN Code | EAR99 | |
| Additional Feature | AUTO/SELF REFRESH | |
| HTS Code | 8542.32.00.36 | |
| Technology | CMOS | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.6 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 200 | |
| JESD-30 Code | R-XDMA-N200 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Power Supplies | 2.5 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Number of Ports | 1Port | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 1.7 mA | |
| Organization | 64Mx64 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 64 | |
| Standby Current-Max | 0.04 A | |
| Memory Density | 4294967296 bit | |
| PLL | No | |
| I/O Type | COMMON | |
| Memory IC Type | DDR DRAM MODULE | |
| Refresh Cycles | 8K | |
| Access Mode | DUAL BANK PAGE BURST | |
| Self Refresh | Yes | |
| Module Type | 200USODIMM |
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