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IMX1T110 Tech Specifications

ROHM Semiconductor  IMX1T110 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 400mV
Number of Elements 2 Elements
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 150mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MX1
Pin Count 6
Output Voltage 50V
Max Output Current 150mA
Polarity NPN
Number of Channels 2Channels
Element Configuration Dual
Max Output Voltage 50V
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Max Frequency 180MHz
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 150mA
VCEsat-Max 0.4 V
Height 1.1mm
Length 2.9mm
Width 1.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IMX1T110 Documents

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