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EMF32T2R Tech Specifications
ROHM Semiconductor EMF32T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Voltage Rated | 50V PNP 30V N Channel | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e3/e2 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN/TIN COPPER | |
| Applications | General Purpose | |
| Current Rating (Amps) | 100mA PNP 100mA N-Channel | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 100mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Pin Count | 6 | |
| Configuration | SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Transistor Type | PNP Pre-Biased, N-Channel | |
| Drain Current-Max (Abs) (ID) | 0.1A | |
| Drain-source On Resistance-Max | 8Ohm | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.15W | |
| Collector Current-Max (IC) | 0.1A | |
| DC Current Gain-Min (hFE) | 100 | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
EMF32T2R Documents
Download datasheets and manufacturer documentation for EMF32T2R
- DatasheetsEMF32,UMF32N
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