Rochester Electronics, LLC NTMD3N08LR2 MOSFETs Transistors Arrays 3.1W 80V

: Rochester Electronics, LLC

Mfr. : NTMD3N08LR2

Twicea : 2071-367-NTMD3N08LR2

: 8-SOIC (0.154, 3.90mm Width)

: Power - Max: 3.1W,Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V,Drain to Source Voltage (Vdss): 80V

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NTMD3N08LR2 brand manufacturers: Rochester Electronics, LLC, Twicea stock, NTMD3N08LR2 reference price.Rochester Electronics, LLC. NTMD3N08LR2 parameters, NTMD3N08LR2 Datasheet PDF and pin diagram description download.You can use the NTMD3N08LR2 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTMD3N08LR2 pin diagram and circuit diagram and usage method of function,NTMD3N08LR2 electronics tutorials.You can download from the Twicea.

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Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	2.3A
Number of Elements	1 Element
Packaging	Tape & Reel (TR)
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8Terminations
Terminal Finish	TIN LEAD
Additional Feature	ULTRA-LOW RESISTANCE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	COMMERCIAL
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	3.1W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	215m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drain Current-Max (Abs) (ID)	2.3A
Drain-source On Resistance-Max	0.215Ohm
Pulsed Drain Current-Max (IDM)	25A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	25 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	Non-RoHS Compliant