Rochester Electronics LLC NDT3055L Specialized Transistors
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Mult. : 1
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NDT3055L
Rochester Electronics NDT3055L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Drain Current-Max (ID) | 4 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Saturation Current | 1 |
NDT3055L
Download datasheets and manufacturer documentation for NDT3055L
- Datasheets51f0443cd5b2942f452d2a9f63e52c88.pdf
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