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IRFD120
Rochester Electronics IRFD120 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Housing material | ABC plastic | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Drain Current-Max (ID) | 1.3 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Gross weight | 9.57 | |
| Transport packaging size/quantity | 48*32*22.5/1500 | |
| Mounting hole size | 19.5 | |
| Mounting method | soldering | |
| Storage temperature | -20...+50 °C | |
| Nominal voltage | 48 V | |
| Type | 3-pole microphone socket on panel | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Depth | 26 mm | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDIP-T3 | |
| Qualification Status | COMMERCIAL | |
| Number of contacts | 3contacts | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Height | 32 | |
| Width | 26 mm |
IRFD120
Download datasheets and manufacturer documentation for IRFD120
- Datasheetsb386fbf67cf03734ea12d46deb29bbc6.pdf
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