Rochester Electronics LLC FQA24N50 Specialized Transistors
FQA24N50
2071-375-FQA24N50
24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN
Min. : 1
Mult. : 1
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FQA24N50
Rochester Electronics FQA24N50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Pins | 5Pins | |
| Housing Material | plastic | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Gross Weight | 2.56 | |
| Transport Packaging Size/Quantity | 50*39*36/10000 | |
| Mounting Method | PCB mount, soldering | |
| Nominal Current | 0.5 A | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-3PN | |
| Package Description | TO-3PN, 3 PIN | |
| Drain Current-Max (ID) | 24 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Nominal Voltage | 30 (DC) V | |
| Number of mating/unmating cycles | 5000 minmating/unmating cycle | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Type | Stereo audio jack (socket) 3.5mm | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Depth | 14 (housing); 18 (total) mm | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Contact Resistance | 30 mOhm max | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation Resistance | 100 MOhm min | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | -20...+70 °C | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| DS Breakdown Voltage-Min | 500 V | |
| Avalanche Energy Rating (Eas) | 1100 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Saturation Current | NOT APPLICABLE | |
| Height | 12.3 (housing) mm | |
| Width | 8.1 mm |
FQA24N50
Download datasheets and manufacturer documentation for FQA24N50
- Datasheetsa15670d075ba4caa6c127320df098fa2.pdf
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