Rochester Electronics, LLC FDW2516NZ MOSFETs Transistors Arrays 20V 1.1W

: Rochester Electronics, LLC

Mfr. : FDW2516NZ

Twicea : 2071-367-FDW2516NZ

: 8-TSSOP (0.173, 4.40mm Width)

: Drain to Source Voltage (Vdss): 20V,Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V,Power - Max: 1.1W

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FDW2516NZ brand manufacturers: Rochester Electronics, LLC, Twicea stock, FDW2516NZ reference price.Rochester Electronics, LLC. FDW2516NZ parameters, FDW2516NZ Datasheet PDF and pin diagram description download.You can use the FDW2516NZ Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find FDW2516NZ pin diagram and circuit diagram and usage method of function,FDW2516NZ electronics tutorials.You can download from the Twicea.

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Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	5.8A
Number of Elements	2 Elements
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8Terminations
Terminal Finish	TIN
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	COMMERCIAL
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1.1W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	745pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Drain to Source Voltage (Vdss)	20V
Drain Current-Max (Abs) (ID)	5.8A
Drain-source On Resistance-Max	0.03Ohm
Pulsed Drain Current-Max (IDM)	20A
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant