Rochester Electronics, LLC FDW2501NZ MOSFETs Transistors Arrays 600mW 20V

: Rochester Electronics, LLC

Mfr. : FDW2501NZ

Twicea : 2071-367-FDW2501NZ

: 8-TSSOP (0.173, 4.40mm Width)

: Power - Max: 600mW,Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V,Drain to Source Voltage (Vdss): 20V

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FDW2501NZ brand manufacturers: Rochester Electronics, LLC, Twicea stock, FDW2501NZ reference price.Rochester Electronics, LLC. FDW2501NZ parameters, FDW2501NZ Datasheet PDF and pin diagram description download.You can use the FDW2501NZ Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find FDW2501NZ pin diagram and circuit diagram and usage method of function,FDW2501NZ electronics tutorials.You can download from the Twicea.

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Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	5.5A
Number of Elements	2 Elements
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8Terminations
Terminal Finish	TIN
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	COMMERCIAL
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	600mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1286pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
JEDEC-95 Code	MO-153AA
Drain Current-Max (Abs) (ID)	5.5A
Drain-source On Resistance-Max	0.018Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant