Rochester Electronics LLC FDD6296 Specialized Transistors
FDD6296
2071-375-FDD6296
4-DIP (0.300", 7.62mm)
RoHS Compliant
15A, 30V, 0.0088ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
In Stock Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FDD6296 Tech Specifications
Rochester Electronics FDD6296 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Package / Case | 4-DIP (0.300", 7.62mm) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | 4-DIP | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Drain Current-Max (ID) | 15 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Series | WL-OCTR | |
| Operating Temperature | -40°C ~ 100°C | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Part Status | Active | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | COMMERCIAL | |
| Approval Agency | CQC, cULus, cURus, UL, VDE | |
| Voltage - Isolation | 5000Vrms | |
| Output Type | Triac | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Contact Tail Size | 10mA | |
| Operating Mode | ENHANCEMENT MODE | |
| Voltage - Forward (Vf) (Typ) | 1.24V | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252 | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Current - DC Forward (If) (Max) | 60 mA | |
| Avalanche Energy Rating (Eas) | 165 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Macro Cells | NoMacro Cell | |
| Current - Cathode | 257µA (Typ) | |
| Static dV/dt (Min) | 1kV/µs | |
| Delay Time - Propagation | 400 V | |
| Saturation Current | 1 |
FDD6296 Documents
Download datasheets and manufacturer documentation for FDD6296
- Datasheetse674c25099058cb2f65f232c21dd74f9.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ