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FDC6318P
Rochester Electronics FDC6318P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Gross weight | 884.00 | |
| Transport packaging size/quantity | 49*34*49/25 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | SUPERSOT-6 | |
| Drain Current-Max (ID) | 2.5 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Diameter of the protected wire (cable) | 7 mm | |
| Expansion range | 7-18 mm | |
| Packaging | 100 m coil | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Type | Black PET protective braiding | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| DS Breakdown Voltage-Min | 12 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Saturation Current | 1 | |
| Diameter | 10.0 mm | |
| Wall thickness | 0.5 mm |
FDC6318P
Download datasheets and manufacturer documentation for FDC6318P
- Datasheets5578e4002920e4083e0bfb5d63c9919e.pdf
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