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BSO615NG Tech Specifications
Rochester Electronics BSO615NG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | ROHS COMPLIANT, SO-8 | |
| Drain Current-Max (ID) | 2.6 A | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Number of Elements | 2 Elements | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| Pulsed Drain Current-Max (IDM) | 10.4 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
BSO615NG Documents
Download datasheets and manufacturer documentation for BSO615NG
- DatasheetsRSELS14664-1.pdf
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