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2N5639_Q

Rochester Electronics  2N5639_Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS Non-Compliant
Packaging Bulk
Max Power Dissipation 350 mW
Element Configuration Single
Power Dissipation 350 mW
Drain to Source Voltage (Vdss) 30 V
Gate to Source Voltage (Vgs) -30 V
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 60 Ω
2N5639_Q brand manufacturers: Rochester Electronics, Twicea stock, 2N5639_Q reference price.Rochester Electronics. 2N5639_Q parameters, 2N5639_Q Datasheet PDF and pin diagram description download.You can use the 2N5639_Q Transistors - JFETs, DSP Datesheet PDF, find 2N5639_Q pin diagram and circuit diagram and usage method of function,2N5639_Q electronics tutorials.You can download from the Twicea.