Renesas NE3515S02-T1C-A RF MOSFETs Transistors 14dBm 12.5dB 12GHz
NE3515S02-T1C-A
2038-368-NE3515S02-T1C-A
4-SMD, Flat Leads
RoHS Compliant
Power - Output: 14dBm,Gain: 12.5dB,Frequency: 12GHz
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NE3515S02-T1C-A Tech Specifications
Renesas NE3515S02-T1C-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | 4-SMD, Flat Leads | |
| Surface Mount | YES | |
| Supplier Device Package | S02 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Factory Pack QuantityFactory Pack Quantity | 1000 | |
| Manufacturer | CTS | |
| Brand | CTS Electronic Components | |
| RoHS | Details | |
| Package | Bulk | |
| Mfr | Renesas Electronics America Inc | |
| Product Status | Obsolete | |
| Voltage Rated | 4 V | |
| Package Description | MICROWAVE, R-PQMW-F4 | |
| Package Style | MICROWAVE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 125 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NE3515S02-T1C-A | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.37 | |
| Drain Current-Max (ID) | 0.025 A | |
| Series | 532 | |
| Packaging | Reel | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Subcategory | Oscillators | |
| Current Rating (Amps) | 88mA | |
| Terminal Position | QUAD | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Frequency | 12GHz | |
| Pin Count | 4 | |
| JESD-30 Code | R-PQMW-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Case Connection | SOURCE | |
| Current - Test | 10 mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | TCXO | |
| Transistor Type | HFET | |
| Gain | 12.5dB | |
| DS Breakdown Voltage-Min | 3 V | |
| Power - Output | 14dBm | |
| FET Technology | HETERO-JUNCTION | |
| Output Format | Clipped Sine Wave | |
| Power Dissipation-Max (Abs) | 0.165 W | |
| Noise Figure | 0.3dB | |
| Voltage - Test | 2 V | |
| Highest Frequency Band | KU BAND | |
| Power Gain-Min (Gp) | 11 dB | |
| Product Category | TCXO Oscillators |
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