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QPD1025
Qorvo QPD1025 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | NI-1230-4 | |
| Factory Pack QuantityFactory Pack Quantity | 18 | |
| Vgs - Gate-Source Voltage | - 2.8 V | |
| RoHS | Details | |
| Transistor Polarity | Dual N-Channel | |
| Id - Continuous Drain Current | 28 A | |
| Vds - Drain-Source Breakdown Voltage | 65 V | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 85 C | |
| Moisture Sensitive | Yes | |
| Pd - Power Dissipation | 685 W | |
| Mounting Styles | Flange Mount | |
| Rds On - Drain-Source Resistance | - | |
| Packaging | Tray | |
| Series | QPD1025 | |
| Type | RF Power MOSFET | |
| Operating Frequency | 1 GHz to 1.1 GHz | |
| Number of Channels | 2 ChannelChannel | |
| Output Power | 1.862 kW | |
| Gain | 22.5 dB |
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