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QPD1003

Qorvo  QPD1003 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case RF-565
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 50 V
Vgs - Gate-Source Breakdown Voltage 145 V
Id - Continuous Drain Current 15 A
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Pd - Power Dissipation 370 W
Mounting Styles SMD/SMT
Development Kit QPD1003PCB401
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 18
Vgs th - Gate-Source Threshold Voltage - 2.8 V
Part # Aliases 1131389 1131389
Unit Weight 3.691596 oz
Packaging Tray
Series QPD1003
Operating Frequency 1.2 GHz to 1.4 GHz
Configuration Single
Output Power 540 W
Transistor Type HEMT
Operating Temperature Range - 40 C to + 85 C
Gain 19.9 dB
QPD1003 brand manufacturers: Qorvo, Twicea stock, QPD1003 reference price.Qorvo. QPD1003 parameters, QPD1003 Datasheet PDF and pin diagram description download.You can use the QPD1003 Transistors - JFETs, DSP Datesheet PDF, find QPD1003 pin diagram and circuit diagram and usage method of function,QPD1003 electronics tutorials.You can download from the Twicea.