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P6SMB170CA_R2_00001 Tech Specifications

Panjit  P6SMB170CA_R2_00001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mount Surface Mount
Number of Pins 2Pins
Supplier Device Package TO-252, (D-Pak)
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Fairchild Semiconductor
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Product Status Obsolete
Reverse Stand-off Voltage 145 V
RoHS Compliant
Breakdown Voltage / V 162 V
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact 30 kV
Unit Weight 0.003245 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Ipp - Peak Pulse Current 2.6 A
Pppm - Peak Pulse Power Dissipation 600 W
Manufacturer Panjit
Brand Panjit
Vesd - Voltage ESD Air Gap 30 kV
Operating Temperature -55°C ~ 150°C (TJ)
Series QFET®
Packaging Reel
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Subcategory TVS Diodes / ESD Suppression Diodes
Technology MOSFET (Metal Oxide)
Termination Style SMD/SMT
Working Voltage 145 V
Polarity Bidirectional
Number of Channels 1 ChannelChannel
Element Configuration Single
Max Reverse Leakage Current 1 µA
Clamping Voltage 234 V
Peak Pulse Current 2.6 A
FET Type N-Channel
Peak Pulse Power 600 W
Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V
Direction Bidirectional
Vgs(th) (Max) @ Id 5V @ 250µA
Test Current 1 mA
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Vgs (Max) ±30V
Product Type TVS Diodes
FET Feature -
Min Breakdown Voltage 162 V
Product Category ESD Suppressors / TVS Diodes
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