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QSD123A4R0 Tech Specifications
ON Semiconductor QSD123A4R0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) | |
| Factory Lead Time | 13 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | Radial, 5mm Dia (T 1 3/4) | |
| Number of Pins | 2Pins | |
| Weight | 284mg | |
| Shape | ROUND | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 100°C | |
| Min Operating Temperature | -40°C | |
| Max Power Dissipation | 100mW | |
| Orientation | Top View | |
| Number of Functions | 1Function | |
| Polarity | NPN | |
| Configuration | SINGLE | |
| Power Dissipation | 100mW | |
| Viewing Angle | 24° | |
| Optoelectronic Device Type | PHOTO TRANSISTOR | |
| Size | 5mm | |
| Rise Time | 7μs | |
| Fall Time (Typ) | 7 μs | |
| Collector Emitter Voltage (VCEO) | 5V | |
| Max Collector Current | 16mA | |
| Max Breakdown Voltage | 30V | |
| Dark Current | 100nA | |
| Infrared Range | YES | |
| Light Current-Nom | 4mA | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
QSD123A4R0 Documents
Download datasheets and manufacturer documentation for QSD123A4R0
- DatasheetsQSD122-24
- Environmental InformationMaterial Declaration QSD123A4R0
- PCN Design/SpecificationLogo 17/Aug/2017
- PCN PackagingMult Devices 24/Oct/2017
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