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NSVMMBD352WT1G Tech Specifications
ON Semiconductor NSVMMBD352WT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.60 | |
| Pin Count | 3 | |
| Element Configuration | Dual | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 10μA @ 7V | |
| Voltage - Forward (Vf) (Max) @ If | 600mV @ 10mA | |
| Max Reverse Leakage Current | 10μA | |
| Operating Temperature - Junction | -55°C~150°C | |
| Halogen Free | Halogen Free | |
| Current - Average Rectified (Io) | 10mA DC | |
| Max Reverse Voltage (DC) | 7V | |
| Average Rectified Current | 10mA | |
| Peak Reverse Current | 10μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 7V | |
| Diode Configuration | 1 Pair Series Connection | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NSVMMBD352WT1G Documents
Download datasheets and manufacturer documentation for NSVMMBD352WT1G
- PCN Design/SpecificationGreen Compound Update 04/Mar/2015
- DatasheetsMMBD/NSVMMBD352WT1G
- Environmental InformationMaterial Declaration NSVMMBD352WT1G
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