- Discrete Semiconductor Products
- Diodes - Rectifiers - Arrays
- NSVBAS21TMR6T2G
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NSVBAS21TMR6T2G
ON Semiconductor NSVBAS21TMR6T2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Diode Element Material | SILICON | |
| Number of Elements | 3 Elements | |
| Operating Temperature (Max.) | 150°C | |
| Operating Temperature (Min.) | -55°C | |
| Power Dissipation (Max) | 0.311W | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G6 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 100nA @ 200V | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA | |
| Output Current-Max | 0.2A | |
| Current - Average Rectified (Io) | 200mA DC | |
| Max Reverse Voltage (DC) | 250V | |
| Average Rectified Current | 200mA | |
| Reverse Recovery Time | 50 ns | |
| Diode Configuration | 3 Independent | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NSVBAS21TMR6T2G
Download datasheets and manufacturer documentation for NSVBAS21TMR6T2G
- PCN Assembly/OriginMult Dev Compound Qual 31/Jul/2019
- ReachStatementON-Semiconductor-company-79.pdf
- DatasheetsBAS21TMR6T1G
- Environmental InformationMaterial Declaration NSVBAS21TMR6T2G
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