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MURD620CTT4G Tech Specifications
ON Semiconductor MURD620CTT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) | |
| Factory Lead Time | 19 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| Series | SWITCHMODE™ | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -65°C | |
| Applications | ULTRA FAST RECOVERY | |
| Additional Feature | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | |
| HTS Code | 8541.10.00.80 | |
| Voltage - Rated DC | 200V | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 6A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MURD620CT | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 5μA @ 200V | |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 3A | |
| Forward Current | 6A | |
| Operating Temperature - Junction | -65°C~175°C | |
| Max Surge Current | 50A | |
| Output Current-Max | 3A | |
| Halogen Free | Halogen Free | |
| Forward Voltage | 1.2V | |
| Max Reverse Voltage (DC) | 200V | |
| Average Rectified Current | 3A | |
| Number of Phases | 1Phase | |
| Reverse Recovery Time | 35 ns | |
| Peak Reverse Current | 5μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 200V | |
| Peak Non-Repetitive Surge Current | 50A | |
| Reverse Voltage | 200V | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 50A | |
| Recovery Time | 35 ns | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MURD620CTT4G Documents
Download datasheets and manufacturer documentation for MURD620CTT4G
- DatasheetsMURD620CT MURD620CTT4G-ON-Semiconductor-datasheet-15850856.pdf MURD620CTT4G.-ON-Semiconductor-datasheet-93401979.pdf MURD620CTT4G-ON-Semiconductor-datasheet-8441268.pdf MURD620CTT4G-ON-Semiconductor-datasheet-14051943.pdf MURD620CTT4G-ON-Semiconductor-datasheet-5438901.pdf
- PCN Assembly/OriginQualification Multiple Devices 24/Sep/2013
- Environmental InformationMaterial Declaration MURD620CTT4G
- RohsStatementON-Semiconductor-MURD620CTT4G.pdf
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