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MMBT5551LT1G Tech Specifications

ON Semiconductor  MMBT5551LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 160V
Collector-Emitter Saturation Voltage 200mV
Number of Elements 1 Element
hFEMin 80
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 160V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 600mA
Base Part Number MMBT5551
Pin Count 3
Element Configuration Single
Power Dissipation 225mW
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
VCEsat-Max 0.2 V
Height 1.11mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MMBT5551LT1G Documents

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