In Stock
:
28560 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MMBD7000LT1G Tech Specifications
ON Semiconductor MMBD7000LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 | |
| Capacitance | 1.5pF | |
| Voltage - Rated DC | 100V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 200mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MMBD7000 | |
| Pin Count | 3 | |
| Element Configuration | Common Cathode | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 3μA @ 100V | |
| Power Dissipation | 300mW | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 100mA | |
| Forward Current | 200mA | |
| Max Reverse Leakage Current | 3μA | |
| Operating Temperature - Junction | -55°C~150°C | |
| Max Surge Current | 500mA | |
| Output Current-Max | 0.2A | |
| Halogen Free | Halogen Free | |
| Current - Average Rectified (Io) | 200mA DC | |
| Forward Voltage | 1.1V | |
| Max Reverse Voltage (DC) | 100V | |
| Average Rectified Current | 200mA | |
| Reverse Recovery Time | 4 ns | |
| Peak Reverse Current | 3μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 100V | |
| Peak Non-Repetitive Surge Current | 500mA | |
| Diode Configuration | 1 Pair Series Connection | |
| Max Forward Surge Current (Ifsm) | 500mA | |
| Recovery Time | 4 ns | |
| Height | 940μm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MMBD7000LT1G Documents
Download datasheets and manufacturer documentation for MMBD7000LT1G
- PCN Assembly/OriginMult Dev Wafer Add 16/Nov/2018
- PCN Design/SpecificationGold to Copper Wire 08/May/2007 SOT23 16/Sep/2016
- DatasheetsMMBD,SMMBD7000LTxG MMBD7000LT1G-ON-Semiconductor-datasheet-8327385.pdf MMBD7000LT1G-ON-Semiconductor-datasheet-11974380.pdf MMBD7000LT1G-ON-Semiconductor-datasheet-93401931.pdf MMBD7000LT1G-ON-Semiconductor-datasheet-14052313.pdf MMBD7000LT1G-ON-Semiconductor-datasheet-9951378.pdf
- Environmental InformationMaterial Declaration MMBD7000LT1G
- RohsStatementON-Semiconductor-MMBD7000LT1G.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



