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MBRD660CTT4G

ON Semiconductor  MBRD660CTT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Series SWITCHMODE™
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications FAST RECOVERY POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 60V
Terminal Position SINGLE
Terminal Form GULL WING
Current Rating 6A
Base Part Number MBRD660CT
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100μA @ 60V
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Forward Current 6A
Max Reverse Leakage Current 100μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 75A
Output Current-Max 3A
Halogen Free Halogen Free
Forward Voltage 900mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 3A
Number of Phases 1Phase
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 75A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 75A
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBRD660CTT4G

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