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MBRD660CTG Tech Specifications

ON Semiconductor  MBRD660CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package DPAK
Breakdown Voltage / V 60V
Packaging Tube
Series SWITCHMODE™
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Voltage - Rated DC 60V
Current Rating 6A
Base Part Number MBRD660CT
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100μA @ 60V
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Forward Current 6A
Operating Temperature - Junction -65°C~175°C
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 60V
Current - Average Rectified (Io) 3A
Forward Voltage 900mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 3A
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 75A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 75A
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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