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MBRD650CTT4G Tech Specifications
ON Semiconductor MBRD650CTT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| Series | SWITCHMODE™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -65°C | |
| Applications | FAST RECOVERY POWER | |
| Additional Feature | FREE WHEELING DIODE | |
| HTS Code | 8541.10.00.80 | |
| Voltage - Rated DC | 50V | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Current Rating | 6A | |
| Base Part Number | MBRD650CT | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 100μA @ 50V | |
| Voltage - Forward (Vf) (Max) @ If | 700mV @ 3A | |
| Forward Current | 6A | |
| Operating Temperature - Junction | -65°C~175°C | |
| Output Current-Max | 3A | |
| Halogen Free | Halogen Free | |
| Forward Voltage | 900mV | |
| Max Reverse Voltage (DC) | 50V | |
| Average Rectified Current | 3A | |
| Number of Phases | 1Phase | |
| Peak Reverse Current | 100μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 50V | |
| Peak Non-Repetitive Surge Current | 75A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 75A | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MBRD650CTT4G Documents
Download datasheets and manufacturer documentation for MBRD650CTT4G
- DatasheetsMBRD620CTG, NRVBD640CTG Series MBRD650CTT4G-ON-Semiconductor-datasheet-499134.pdf MBRD650CTT4G-ON-Semiconductor-datasheet-34219226.pdf MBRD650CTT4G-ON-Semiconductor-datasheet-94100523.pdf MBRD650CTT4G-ON-Semiconductor-datasheet-11551931.pdf MBRD650CTT4G-ON-Semiconductor-datasheet-81455754.pdf
- PCN Assembly/OriginMult Dev Wafer Fab/Material Chg 3/May/2018
- PCN Design/SpecificationMult Dev Material/Wafer Chg 7/Mar/2018
- Environmental InformationMaterial Declaration MBRD650CTT4G
- RohsStatementON-Semiconductor-MBRD650CTT4G.pdf
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