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MBR60H100CTG Tech Specifications

ON Semiconductor  MBR60H100CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Weight 4.535924g
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tube
Series SWITCHMODE™
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications EFFICIENCY
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.80
Voltage - Rated DC 100V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 60A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 10μA @ 100V
Voltage - Forward (Vf) (Max) @ If 840mV @ 30A
Forward Current 60A
Max Reverse Leakage Current 100μA
Operating Temperature - Junction 175°C Max
Max Surge Current 350A
Forward Voltage 980mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 30A
Number of Phases 1Phase
Peak Reverse Current 10mA
Max Repetitive Reverse Voltage (Vrrm) 100V
JEDEC-95 Code TO-220AB
Peak Non-Repetitive Surge Current 350A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 350A
Height 15.75mm
Length 10.28mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MBR60H100CTG Documents

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