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MBD54DWT1G Tech Specifications

ON Semiconductor  MBD54DWT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Cut Tape (CT)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Applications FAST RECOVERY
HTS Code 8541.10.00.70
Capacitance 10pF
Voltage - Rated DC 30V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBD54D
Pin Count 6
Element Configuration Dual
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Schottky
Current - Reverse Leakage @ Vr 2μA @ 25V
Power Dissipation 150mW
Voltage - Forward (Vf) (Max) @ If 1V @ 100mA
Forward Current 200mA
Max Reverse Leakage Current 2μA
Operating Temperature - Junction 125°C Max
Max Surge Current 600mA
Output Current-Max 0.2A
Halogen Free Halogen Free
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1V
Max Reverse Voltage (DC) 30V
Average Rectified Current 200mA
Number of Phases 1Phase
Reverse Recovery Time 5 ns
Peak Reverse Current 2μA
Max Repetitive Reverse Voltage (Vrrm) 30V
Peak Non-Repetitive Surge Current 600mA
Diode Configuration 2 Independent
Max Forward Surge Current (Ifsm) 600mA
Recovery Time 5 ns
Reverse Test Voltage 25V
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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