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DFB2560 Tech Specifications
ON Semiconductor DFB2560 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 11 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 4-SIP, TS-6P | |
| Number of Pins | 4Pins | |
| Weight | 7g | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2016 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | UL RECOGNIZED | |
| Element Configuration | Single | |
| Diode Type | Single Phase | |
| Current - Reverse Leakage @ Vr | 10μA @ 600V | |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 25A | |
| Case Connection | ISOLATED | |
| Forward Current | 25A | |
| Max Surge Current | 300A | |
| Forward Voltage | 1.1V | |
| Average Rectified Current | 25A | |
| Number of Phases | 1Phase | |
| Peak Reverse Current | 10μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 600V | |
| Peak Non-Repetitive Surge Current | 350A | |
| Max Forward Surge Current (Ifsm) | 350A | |
| Reverse Voltage (DC) | 420V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DFB2560 Documents
Download datasheets and manufacturer documentation for DFB2560
- DatasheetsDFB2560-ON-Semiconductor-datasheet-85438532.pdf DFB2560-ON-Semiconductor-datasheet-86689565.pdf DFB2560-ON-Semiconductor-datasheet-100088441.pdf DFB2560-ON-Semiconductor-datasheet-30893215.pdf DFB2505 - 100 DFB2560-Fairchild-Semiconductor-datasheet-11775248.pdf
- ReachStatementFairchild-Semiconductor-DFB2560.pdf
- Environmental InformationMaterial Declaration DFB2560
- PCN Design/SpecificationLogo 17/Aug/2017
- PCN PackagingMult Devices 24/Oct/2017
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