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BAT54CXV3T1G Tech Specifications
ON Semiconductor BAT54CXV3T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-89, SOT-490 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Published | 2005 | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 | |
| Voltage - Rated DC | 30V | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 200mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BAT54CXV3 | |
| Pin Count | 3 | |
| Element Configuration | Common Cathode | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 2μA @ 25V | |
| Power Dissipation | 240mW | |
| Voltage - Forward (Vf) (Max) @ If | 800mV @ 100mA | |
| Forward Current | 200mA | |
| Max Reverse Leakage Current | 2μA | |
| Operating Temperature - Junction | -55°C~125°C | |
| Max Surge Current | 600mA | |
| Output Current-Max | 0.2A | |
| Halogen Free | Halogen Free | |
| Current - Average Rectified (Io) | 200mA DC | |
| Forward Voltage | 800mV | |
| Max Reverse Voltage (DC) | 30V | |
| Average Rectified Current | 200mA | |
| Reverse Recovery Time | 5 ns | |
| Peak Reverse Current | 2mA | |
| Max Repetitive Reverse Voltage (Vrrm) | 30V | |
| Peak Non-Repetitive Surge Current | 600mA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 600mA | |
| Recovery Time | 5 ns | |
| Height | 800μm | |
| Length | 1.7mm | |
| Width | 950μm | |
| RoHS Status | ROHS3 Compliant | |
| Radiation Hardening | No | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |
BAT54CXV3T1G Documents
Download datasheets and manufacturer documentation for BAT54CXV3T1G
- PCN Design/SpecificationWire Bond 01/Dec/2010
- DatasheetsBAT54CXV3T1 Datasheet BAT54CXV3T1G-ON-Semiconductor-datasheet-10226081.pdf BAT54CXV3T1G-ON-Semiconductor-datasheet-41194329.pdf BAT54CXV3T1G-ON-Semiconductor-datasheet-14051899.pdf
- Environmental InformationMaterial Declaration BAT54CXV3T1G
- RohsStatementON-Semiconductor-BAT54CXV3T1G.pdf
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