ON Semiconductor 3SK264-5-TG-E RF MOSFETs Transistors 200MHz 23dB
3SK264-5-TG-E
1807-368-3SK264-5-TG-E
TO-253-4, TO-253AA
Frequency: 200MHz,Gain: 23dB
:
75930 Min. : 1
Mult. : 1
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3SK264-5-TG-E
ON Semiconductor 3SK264-5-TG-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) | |
| Contact Plating | Tin | |
| Package / Case | TO-253-4, TO-253AA | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 200mW | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 30mA | |
| Frequency | 200MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Dual | |
| Power Dissipation | 200mW | |
| Current - Test | 10mA | |
| Drain to Source Voltage (Vdss) | 15V | |
| Transistor Type | N-Channel Dual Gate | |
| Continuous Drain Current (ID) | 30mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| Gain | 23dB | |
| Drain Current-Max (Abs) (ID) | 0.03A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | 2.2dB | |
| Voltage - Test | 6V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
3SK264-5-TG-E
Download datasheets and manufacturer documentation for 3SK264-5-TG-E
- PCN Obsolescence/ EOLEOL 18/Oct/2016
- Datasheets3SK264
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