NXP USA Inc. PMBFJ112,215 JFETs Transistors 5mA @ 15V 50Ohm

: NXP USA Inc.

Mfr. : PMBFJ112,215

Twicea : 1786-373-PMBFJ112,215

: TO-236-3, SC-59, SOT-23-3

: Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V,Voltage - Cutoff (VGS off) @ Id: 5V @ 1μA,Resistance - RDS(On): 50Ohm

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PMBFJ112,215 brand manufacturers: NXP USA Inc., Twicea stock, PMBFJ112,215 reference price.NXP USA Inc.. PMBFJ112,215 parameters, PMBFJ112,215 Datasheet PDF and pin diagram description download.You can use the PMBFJ112,215 Transistors - JFETs, DSP Datesheet PDF, find PMBFJ112,215 pin diagram and circuit diagram and usage method of function,PMBFJ112,215 electronics tutorials.You can download from the Twicea.

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Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Number of Elements	1 Element
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3Terminations
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.21.00.95
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MBFJ112
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Configuration	SINGLE
Operating Mode	DEPLETION MODE
Power - Max	300mW
FET Type	N-Channel
Transistor Application	SWITCHING
Input Capacitance (Ciss) (Max) @ Vds	6pF @ 10V VGS
JEDEC-95 Code	TO-236AB
Drain-source On Resistance-Max	50Ohm
DS Breakdown Voltage-Min	40V
FET Technology	JUNCTION
Power Dissipation-Max (Abs)	0.3W
Current - Drain (Idss) @ Vds (Vgs=0)	5mA @ 15V
Voltage - Cutoff (VGS off) @ Id	5V @ 1μA
Voltage - Breakdown (V(BR)GSS)	40V
Resistance - RDS(On)	50Ohm
RoHS Status	ROHS3 Compliant