Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MW7IC2425NBR1
NXP MW7IC2425NBR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 10 Weeks | |
| Package / Case | TO-272-16 Variant, Flat Leads | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 225°C | |
| Voltage Rated | 65V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 16Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | ESD PROTECTION | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Frequency | 2.45GHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MW7IC2425 | |
| JESD-30 Code | R-PDFM-F16 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Current - Test | 55mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 27.7dB | |
| DS Breakdown Voltage-Min | 65V | |
| Power - Output | 25W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
MW7IC2425NBR1
Download datasheets and manufacturer documentation for MW7IC2425NBR1
- PCN Packaging12NC 27/Nov/2016
- DatasheetsMW7IC2425
- PCN Design/SpecificationTrace Marking Removal 20/Jun/2019
- PCN Obsolescence/ EOLMult Devices EOL 13/Apr/2018
:
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



