NXP USA Inc. MRF8S9120NR3 RF MOSFETs Transistors 960MHz 19.8dB 33W
MRF8S9120NR3
1786-368-MRF8S9120NR3
OM-780-2
Frequency: 960MHz,Gain: 19.8dB,Power - Output: 33W
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Mult. : 1
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MRF8S9120NR3
NXP MRF8S9120NR3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 10 Weeks | |
| Package / Case | OM-780-2 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 225°C | |
| Voltage Rated | 70V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Frequency | 960MHz | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| JESD-30 Code | R-PDFP-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Current - Test | 800mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Gain | 19.8dB | |
| DS Breakdown Voltage-Min | 70V | |
| Power - Output | 33W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 28V | |
| RoHS Status | ROHS3 Compliant |
MRF8S9120NR3
Download datasheets and manufacturer documentation for MRF8S9120NR3
- PCN Design/SpecificationTrace Marking Removal 20/Jun/2019
- Environmental InformationNXP RoHS3 Cert
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