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MRF6V10010NR4

NXP  MRF6V10010NR4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 10 Weeks
Package / Case PLD-1.5
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 200°C
Voltage Rated 100V
Usage Level Military grade
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Frequency 1.09GHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF6V10010
JESD-30 Code R-PQCC-N4
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 25dB
DS Breakdown Voltage-Min 100V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant

MRF6V10010NR4

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